| Place of Origin: | SUZHOU |
|---|---|
| Brand Name: | PHOENIX |
| Certification: | ANSI/ESDA/JEDEC JS-001 |
| Model Number: | CERAMIC3030 |
| Minimum Order Quantity: | 5000PCS |
| Price: | Negotiation |
| Packaging Details: | 4000PCS /ROLL |
| Delivery Time: | 7-10 DAYS |
| Payment Terms: | Western Union, MoneyGram, T/T |
| Supply Ability: | 4000K PER MONTH |
| Name: | SMD LED CERAMIC3030 BIUE | λd: | 440-460nm |
|---|---|---|---|
| Power: | 2W | Nput Voltage(V): | 3v |
| Luminous Flux(lm): | 40-50lm | Warranty(Year): | 2 Years |
| Working Time (hours): | 20000 | Operating Temperature(℃): | -40-85 |
| High Light: | 460nm 3030 LED Chip,3v 3030 LED Chip,2w led lamp chip |
||
3V 700MA 2W CERAMIC3030 40-50LM 440-460NM SMD LED CHIP FOR PLANT LIGHTING
Characteristic
Parameter Symbol Values
| Operating Temperature |
T op |
min. max. |
-40 °C 120 °C |
| Storage Temperature |
T stg |
min. max. |
-40 °C 120 °C |
| Junction Temperature | T | max. | 135 °C |
| Junction Temperature absolute* | Tjabs | max. | 150 °C |
| Forward current | I |
min. max. |
100 mA 2000 mA |
|
Surge Current t ≤ 10 µs; D = 0.005 %; TJ = 25 °C |
FS | max. | 2000 mA |
| Reverse voltage 2) | V | Not designed for reverse operation | |
|
ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B) |
ESD | 8 kV |
This is verified by testing 30 pieces. Pass criteria: No catastrophic failures allowed, luminous flux must be better than L70B50 after 1000 h.
Characteristics
I = 700 mA; TJ = 25 °C
Parameter Symbol Values
| Peak Wavelength | λpeak typ. 445 nm |
|
Dominant Wavelength 3) I = 700 mA |
min. 444 nm typ. 450 nm max. 457 nm |
| Spectral Bandwidth at rel,max | ∆λ typ. 18 nm |
| Viewing angle at 50% IV | 2φ typ. 120 ° |
|
Forward Voltage 4) I = 700 mA |
VF min. 2.80 V typ. 2.90 V max. 3.20 V |
| Reverse current 2) | IR Not designed for reverse operation |
| Electrical thermal resistance junction/solderpoint with efficiency ηe = 65 % | RthJS elec. typ. 1.3 K / W |
Forward Voltage Groups
Group Forward Voltage 4)
I = 700 mA
VF:
| 2.8v | 2.9v |
| 2.9v | 3.0v |
| 3.0v | 3.1v |
| 3.1v | 3.2v |
Wavelength
Group
Dominant Wavelength 3)
I = 700 mA
λdom
| 444nm | 449nm |
| 449nm | 453nm |
| 453nm | 457nm |
Relative Spectral Emission
Irel = f (λ); IF = 700 mA; TJ = 25 °C
Radiation Characteristics
Irel = f (ϕ); TJ = 25 °C
Dimensional Drawing
Further Information: 29.0 mg
Approximate Weight: Package marking: Cathode
Corrosion test: Class: 3B
Test condition: 40°C / 90 % RH / 15 ppm H2S / 14 days (stricter than IEC 60068-2-43)
ESD advice: The device is protected by ESD device which is connected in parallel to the Chip.
Reflow Soldering Profile
Product complies to MSL Level 2 acc. to JEDEC J-STD-020E
Profile Feature Symbol Pb-Free (SnAgCu) Assembly Unit
Minimum Recommendation Maximum
|
Ramp-up rate to preheat*) 2 25 °C to 150 °C |
3 | K/s |
|
tS 60 100 T to T |
120 | s |
|
Ramp-up rate to peak*) 2 T to T |
3 | K/s |
| Liquidus temperature TL 217 | °C | |
| Time above liquidus temperature tL 80 | 100 | s |
| Peak temperature T 245 | 260 | °C |
|
Time within 5 °C of the specified peak 10 20 temperature TP - 5 K |
30 | s |
|
Ramp-down rate* 3 T to 100 °C |
6 | K/s |
|
Time 25 °C to TP |
480 | s |
All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-
