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3V 700MA 2W CERAMIC3030 40-50LM 440-460NM SMD LED CHIP FOR PLANTLIGHTING

Basic Information
Place of Origin: SUZHOU
Brand Name: PHOENIX
Certification: ANSI/ESDA/JEDEC JS-001
Model Number: CERAMIC3030
Minimum Order Quantity: 5000PCS
Price: Negotiation
Packaging Details: 4000PCS /ROLL
Delivery Time: 7-10 DAYS
Payment Terms: Western Union, MoneyGram, T/T
Supply Ability: 4000K PER MONTH
Name: SMD LED CERAMIC3030 BIUE λd: 440-460nm
Power: 2W Nput Voltage(V): 3v
Luminous Flux(lm): 40-50lm Warranty(Year): 2 Years
Working Time (hours): 20000 Operating Temperature(℃): -40-85

3V 700MA 2W CERAMIC3030 40-50LM 440-460NM SMD LED CHIP FOR PLANT LIGHTING

Characteristic

Professional plant led:
Dark blue (450 nm) and ultra red (660 nm) versions provide the light required for photosynthesis
The far infrared (730 nm) version can control the whole process of plants from germination to vegetative growth and then to flowerin
EQ white light can realize humanized working environment
High energy efficiency( μ mol/J)
Maximum drive current high
Low thermal resistance
Multiple radiation angles - 80 °, 120 ° and 150 ° wide illumination characteristics
Highly reliable ceramic package with long service life and corrosion resistance
Rugged even in wet environments
In addition, it also provides blue light, true green light, yellow light, red light and other versions, which are suitable for special lighting needs
Optimum heat / cold flux coefficient (85 ° C ~ 25 ° C)
 
Maximum Ratings

Parameter Symbol Values

Operating Temperature

T

op

min.

max.

-40 °C

120 °C

Storage Temperature

T

stg

min.

max.

-40 °C

120 °C

Junction Temperature T max. 135 °C
Junction Temperature absolute* Tjabs max. 150 °C
Forward current I

min.

max.

100 mA

2000 mA

Surge Current

t ≤ 10 µs; D = 0.005 %; TJ = 25 °C

FS max. 2000 mA
Reverse voltage 2) V   Not designed for reverse operation

ESD withstand voltage

acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B)

ESD   8 kV

This is verified by testing 30 pieces. Pass criteria: No catastrophic failures allowed, luminous flux must be better than L70B50 after 1000 h.

 

Characteristics

I = 700 mA; TJ = 25 °C

Parameter Symbol Values

Peak Wavelength λpeak                    typ.                           445 nm

Dominant Wavelength 3)

I = 700 mA

                              min.                         444 nm

                              typ.                          450 nm

                              max.                        457 nm

Spectral Bandwidth at rel,max ∆λ                          typ.                          18 nm
Viewing angle at 50% IV 2φ                          typ.                          120 °

Forward Voltage 4)

I = 700 mA

VF                         min.                          2.80 V

                              typ.                           2.90 V

                              max.                         3.20 V

Reverse current 2) IR                Not designed for reverse operation
Electrical thermal resistance junction/solderpoint with efficiency ηe = 65 % RthJS elec.            typ.                       1.3 K / W

 

Forward Voltage Groups

Group Forward Voltage 4)                                 

I = 700 mA

VF:

2.8v 2.9v
2.9v 3.0v
3.0v 3.1v
3.1v 3.2v

 

Wavelength

Group

Dominant Wavelength 3)

I = 700 mA

λdom

444nm 449nm
449nm 453nm
453nm 457nm

 

 

                                                                           

 Relative Spectral Emission                                                

Irel = f (λ); IF = 700 mA; TJ = 25 °C

3V 700MA 2W CERAMIC3030 40-50LM 440-460NM  SMD  LED CHIP FOR  PLANTLIGHTING 0

Radiation Characteristics

Irel = f (ϕ); TJ = 25 °C

3V 700MA 2W CERAMIC3030 40-50LM 440-460NM  SMD  LED CHIP FOR  PLANTLIGHTING 1

3V 700MA 2W CERAMIC3030 40-50LM 440-460NM  SMD  LED CHIP FOR  PLANTLIGHTING 2

3V 700MA 2W CERAMIC3030 40-50LM 440-460NM  SMD  LED CHIP FOR  PLANTLIGHTING 3

 

 

 

Dimensional Drawing

3V 700MA 2W CERAMIC3030 40-50LM 440-460NM  SMD  LED CHIP FOR  PLANTLIGHTING 4

 

Further Information:                                                  29.0 mg

 

Approximate Weight: Package marking:                  Cathode

Corrosion test:                                                          Class:   3B

                                                                                 Test condition: 40°C / 90 % RH / 15 ppm H2S / 14 days (stricter than IEC 60068-2-43)

ESD advice:                                                             The device is protected by ESD device which is connected in parallel to the Chip.

                     

Reflow Soldering Profile

Product complies to MSL Level 2 acc. to JEDEC J-STD-020E

 

Profile Feature                                              Symbol                 Pb-Free (SnAgCu) Assembly       Unit

                                                                                         Minimum Recommendation Maximum

Ramp-up rate to preheat*)                               2

25 °C to 150 °C

3 K/s

tS                                                                    60                           100

T to T

120 s

Ramp-up rate to peak*)                                                                   2

T to T

3 K/s
Liquidus temperature TL                                                                217   °C
Time above liquidus temperature tL                                               80 100 s
Peak temperature T                                                                       245 260 °C

Time within 5 °C of the specified peak               10                        20

temperature TP - 5 K

30 s

Ramp-down rate*                                                                            3

T to 100 °C

6 K/s

Time

25 °C to TP

480 s

 

All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-

 

Contact Details
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Phone Number : +8618897990409

WhatsApp : +8618897990409